Shenzhen Runhua Chuangxin Technology Co., LTD., as a professional design and supplier of integrated semiconductor devices, is committed to promoting the integrated semiconductor devices with excellent performance, stable quality and competitive price. To provide customers with excellent chip solutions, in power semiconductor devices to provide breakdown voltage coverage of -100V to 700V MOSFETs, steady-state current coverage of 100mA to 400A choice range. The most advanced trench technology and current path layout structure are adopted to maximize the power density of MOSFET and significantly reduce the conduction power loss in the current conduction process. At the same time, it provides a series of MOSFETs with low switching loss, which effectively reduces the slot charge (Qg), especially the charge between the slots and drains (Qgd), so as to reduce the switching loss in the fast switching process. Using advanced SGT technology, the MOSFET power, heat dissipation and reliability to a new height, to ensure the reliability of MOSFET in complex use environment, and effectively reduce the cost.
